葡萄澳门新京(China)官方网站|2024App Station

Product

4H Semi-Insulating

`
Current > 4H Semi-Insulating
SICC is constantly pursuing higher crystal quality and processing quality to meet customer needs.
The 4 & 6 inch products are available for supply currently
The 8-inch product is under development

*Please contact our sales for more detailed information.

>Contact us

Specifications

Semi-insulating type
  • Polytype 4H
  • Diameter(mm) 100 & 150
  • Orientation(°) 0
  • Thickness(μm) 500
  • Surface Finish Epi-ready

RF Devices

By growing GaN epitaxy layer on semi-insulating silicon carbide substrate, silicon carbide based GAN epitaxy wafer can be further made into HEMT and other microwave RF devices, which can be used in information communication, radio detection and other fields.
>Back
© 2021 Copyright 澳门新葡萄新京app官网. All Rights Reserved.
Top
XML 地图