SEMICON JAPAN, the world-renowned Japanese International Semiconductor Exhibition, was held in Tokyo from the 11th to the 13th of December with great success.
More than 1,100 device manufacturers, chipmakers, equipment suppliers and materials companies from around the world, as well as those involved in semiconductor applications such as automotive and artificial intelligence, are participating in the exhibition.
The leading companies and technology experts from around the world come together to discuss the vibrant growth prospects of the semiconductor industry and to share insights into the fast-changing industry market.
As a global leader in the field of silicon carbide substrates, SICC displayed its 12-inch conductive N-type substrates, the industry's leading high-quality, low-resistance P-type substrates and high-purity semi-insulating substrates, and other world-leading products, taking the spotlight in this tech event.
With the increasing demand for high-performance and high-efficiency semiconductor materials worldwide, Silicon Carbide (SiC) has become one of the most popular materials in the industry due to its excellent performance under various environments such as high temperature, high pressure and high frequency. The products displayed by SICC has become an ideal channel to explore the latest SiC technology and thus attracted a large number of clients, experts and visitors to carry out technical exchanges.
The world's first 12-inch conductive N-type silicon carbide substrate has established an industry milestone and attracted widespread international attention. The area of the 12-inch substrate is 2.25 times larger than that of 8 inches, and the usability rate is about 2.5 times more than that of 8 inches, with more wafers output from a single silicon carbide wafer. The ultra-large size substrate broadens the downstream application scenarios and carries great significance for the future.
The industry-leading high-quality, low-resistance 6-inch P-type silicon carbide substrate has been successfully delivered to customers and has passed testing. This product will greatly accelerate the development of high-performance SiC-IGBTs, which will be used in higher voltage applications such as smart grid in the future. SICC's high-quality, low-resistance P-type SiC substrates are prepared using LPE, which can grow ultra-high-quality SiC crystals with a resistivity of less than 200mΩ-cm, uniform in-plane resistivity distribution, and sound crystallinity. P-type substrates with 4 degree surface orientation can be used for epitaxial and device fabrication directly, bridging the gap in the industry and has stimulated great interest in the market.
High-purity semi-insulating substrate, as an important material for high-frequency RF devices, is playing an important role in 5G base stations, satellite communications, low-altitude economy and extending more application scenarios. Our products have ranked in the top three in the global market share for five consecutive years. The 8-inch Facet-free conductive substrate on display has achieved nearly ‘zero TSD’ and low BPD density preparation, effectively improving wafer utilization, and has gained the favor of automotive-grade device manufacturers.
SICC displayed its innovative products and technological advantages in the field of third-generation semiconductors for industry customers and partners, and demonstrated its outstanding achievements in the field of silicon carbide materials.
During the exhibition period, SICC also discussed the development trend and application prospect of compound semiconductor with global counterparts, and shared the company's latest research results in the field of silicon carbide substrate. SICC will join hands with the upstream and downstream of the industry to discuss and promote the development of compound semiconductor technology through international co-operation.
Open competition based on high quality standards is the dominant force for sustainable development of the industry. SICC, as a leading supplier of silicon carbide substrates, will continue to participate in establishing industry standards and providing high-quality products to the market. By increasing investment in R&D, we will promote the continuous improvement of product performance, and also actively participate in the development of international standards to ensure that our technology and products can meet the performance and quality requirements of global customers. We will endeavor to become a pioneer in the field of silicon carbide substrates and lead the industry towards a sustainable and prosperous future.
SICC will uphold the development concept of ‘Technology Quality and Sustainability’, and work along with our partners to build a low-carbon, digital and intelligent future!
